固态结构异构体的合成和热特性:SnSe和MoSe2的有序交叉生长
Noel S Gunning1, Joseph Feser2, Matt Beekman3
1†Department of Chemistry and Materials Science Institute, University of Oregon, Eugene, Oregon 97403, United States.
Journal of the American Chemical Society
|June 19, 2015
概括
研究人员使用调制元素反应剂方法合成了化 (SnSe) 和化 (MoSe2) 的新型分层异构体. 这些新材料的导热率非常低,因为它们的接口不整齐,这表明热电应用的潜力.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术纳米技术
背景情况:
- 像SnSe和MoSe2这样的分层材料对热电应用很有兴趣.
- 控制分层异构结构中的结构和接口对于调整它们的特性至关重要.
- 了解复杂的分层化合物的热传输机制对于材料设计至关重要.
研究的目的:
- 根据 (SnSe) 1.05和 (MoSe2) n.n.进行结构异构体家族的合成和表征.
- 研究层次序列和厚度对这些同位素的结构和热性质的影响.
- 确定横平面导热率,并确定导致热阻的因素.
主要方法:
- 使用调制元素反应剂方法合成六种不同的同位素.
- 通过X射线衍射和电子显微镜对结构性质的表征.
- 测量横平面导热率的测量.
主要成果:
- 成功制备了六种独特的结构异构体,具有不同的层排列,但具有相似的晶格参数.
- 在所有合成的同位素中观察到非常低的横平面导热率 (∼0.08 Wm(-1) K(-1)) .
- 鉴定了波结构上无序的范德瓦尔斯接口 (SnSe-MoSe2和MoSe2-MoSe2) 作为热传输不良的主要原因.
结论:
- 同位体中构成层的结构,顺序和厚度是由前体的排列决定的.
- 低导热率归因于接口散射,无序的接口发挥了主导作用.
- 这些发现提供了关于结构复杂性,界面特性和层级材料中的热传输之间的关系的见解.
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