稳定的N2纳米泡在Pt纳米电极上的电化学核化
Qianjin Chen1, Hilke S Wiedenroth1,2, Sean R German1,3
1Department of Chemistry, University of Utah , 315 S 1400 E, Salt Lake City, Utah 84112, United States.
Journal of the American Chemical Society
|September 1, 2015
概括
研究人员在电极上使用电氧化探讨了 (N2) 纳米泡核. 独立于电极大小,确定了纳米泡形成的关键度,揭示了界面上的气体核化.
科学领域:
- 电化学
- 表面科学
- 纳米技术
背景情况:
- 对于各种科学和工业应用来说,了解界面上的气泡核化是至关重要的.
- 之前的研究已经研究了气体纳米泡电生成,但具体的核化机制需要进一步阐明.
研究的目的:
- 在纳米盘电极上研究单个 (N2) 纳米泡的核化.
- 确定纳米气泡核化所需的溶解N2的临界表面度.
- 了解影响电生成N2纳米泡的尺寸和稳定性的因素.
主要方法:
- 使用循环电压测量来研究纳米盘电极 (690nm) 上的 (N2H4) 的电氧化.
- 监测电流的突然下降作为N2纳米泡核和生长的指标.
- 在泡形成之前,从法拉达电流测量中计算了N2 (CN2,临界) 的临界表面度.
主要成果:
- 在Pt纳米盘电极上成功观察了单个N2纳米泡的核和生长.
- 确定纳米泡核化溶解N2的临界表面度大约为0.11M.
- 发现CN2 (临界) 是独立于电极半径和散装氨酸度,并且明显高于N2和度.
结论:
- 纳米泡的尺寸主要取决于电极表面附近的局部N2度.
- 稳定的N2纳米泡的动态平衡是通过三相接触线的氧化保持的.
- 结果提供了对电极-液体接口的气体核化过程的基本见解.
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