碳纳米管晶体管的末端连接接件具有低电阻,不依据尺寸
Qing Cao1, Shu-Jen Han2, Jerry Tersoff2
1IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598, USA. qcao@us.ibm.com.
概括
研究人员开发了一种新的单壁碳纳米管晶体管技术. 这种结合式接触方案克服了尺寸依赖的电阻,为未来的电子产品提供更小,更高性能的晶体管.
科学领域:
- 材料科学
- 纳米技术
- 电气工程
背景情况:
- 晶体管面临着缩放的限制,因为接触阻力随着尺寸的减少而增加.
- 碳纳米管提供10nm以下的高性能通道,但存在类似的接触阻力问题.
- 传统的侧键或平面接触方案阻碍了纳米级晶体管的性能.
研究的目的:
- 开发一种新的单壁碳纳米管 (SWNT) 晶体管技术.
- 在纳米级晶体管中克服尺寸依赖的接触电阻限制.
- 为未来规模化设备技术提供高性能SWNT晶体管的制造.
主要方法:
- 使用端结合式接触方案制造SWNT晶体管.
- 通过与SWNT反应形成p型端结合接触物以产生碳化物.
- 对10纳米以下接触长度的装置电阻和电流的描述.
主要成果:
- 实现了与尺寸无关的接触电阻,克服了主要的性能障碍.
- 制造的高性能SWNT晶体管,设备电阻低于36千欧姆.
- 证明每管电流超过15微安培,没有观察到施托基屏障.
结论:
- 终端结合式接触方案有效地消除了SWNT晶体管的尺寸依赖的接触电阻.
- 这项技术可以创建高效,可缩放的SWNT晶体管.
- 开发的战略为下一代电子设备铺平了道路,
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