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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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种子晶体同质性控制单层MoS2和WS2的横向和垂直异位素

Youngdong Yoo1, Zachary P Degregorio1, James E Johns1

  • 1Department of Chemistry, University of Minnesota , Minneapolis, Minnesota 55455, United States.

Journal of the American Chemical Society
|October 22, 2015
PubMed
概括

研究人员开发了一种两步化学蒸汽沉积方法,用于制造横向和垂直的过渡金属二化物 (TMDC) 异质连接. 这种技术精确地控制了用于先进电子产品的二硫化 (MoS2) 种子晶体的生长.

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Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
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