在抗兴奋剂SnTe系统中增强的热电特性
Li-Dong Zhao1, Xiao Zhang1, Haijun Wu
1School of Materials Science and Engineering, Beihang University , Beijing 100191, China.
Journal of the American Chemical Society
|February 13, 2016
概括
这项研究通过优化电传输和降低热导率来提高锡化物 (SnTe) 的热电性能. 化物和化物 (SrTe) 的添加产生了1.2的峰值值 (ZT),表明SnTe
科学领域:
- 材料科学
- 固态物理
- 热电器
背景情况:
- 锡化物 (SnTe) 是热电应用的一个有前途的材料.
- 提高热电性能需要同时提高电传输性能和降低热导率.
- 优化载体度和引入声子散射中心是关键策略.
研究的目的:
- 为了提高SnTe的热电性能.
- 通过费米级调整改善电传输特性.
- 通过使用纳米结构来降低晶格导热性,而不会影响载体的移动性.
主要方法:
- 通过使用 Ga,In,Bi 和 Sb 剂优化载体度来调整费米水平.
- 将 SrTe 纳入作为第二阶段,以创建紧张的内毒性纳米结构.
- 测量电传输特性 (Seebeck系数,功率因子) 和导热性.
- 热电功率 (ZT) 的计算.
主要成果:
- 在Sn{\displaystyle S_{\displaystyle S_{\displaystyle S_{\displaystyle S_{\displaystyle S_{\displaystyle S_{\displaystyle S_{\displaystyle S_{\displaystyle S_{\displaystyle S_{\displaystyle S_{\displaystyle S_{\displaystyle S_{\displaystyle S_{\displaystyle S_{\displaystyle S_{\displaystyle S_{\displaystyle S_{\displaystyle S_{\displaystyle S_{\displaystyle S_{\displaystyle S_{\displaystyle S_{\displaystyle S_{\displaystyle S_{\displaystyle S_{\displaystyle S_{\displaystyle S_{\}}}}
- 在室温下将格子导热率从~2.0 Wm{-1}K{-1}降至~1.2 Wm{-1}K{-1}以5.0%的SrTe.
- 在823K的温度下,Sn{\displaystyle S_{\mathrm {S} }{\displaystyle S_{\mathrm {S} }{\displaystyle S_{\mathrm {S} }{\mathrm {S} }{\displaystyle S_{\mathrm {S} }{\mathrm {S} }{\displaystyle S_{\mathrm {S} }{\mathrm {S} }{\mathrm {S} }{\mathrm {S} }{\mathrm {S} }{\mathrm {S} }{\mathrm {S} }{\mathrm {S} }{\mathrm {S}.
- 在300-823K的温度范围内获得0.7的高平均ZT.
结论:
- 同时增强电传输和降低热导率显著提高了SnTe的热电性能.
- 兴奋剂和SrTe的添加有效调整载体度,并引入声子散射.
- SnTe被认为是中温热电应用的强大候选物.
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