在五角形双金字塔Dy (III) 单离子磁铁中以对称性支持的磁阻断在20K
Yan-Cong Chen1, Jun-Liang Liu1, Liviu Ungur2,3
1Key Laboratory of Bioinorganic and Synthetic Chemistry of Ministry of Education, School of Chemistry and Chemical Engineering, Sun Yat-Sen University , Guangzhou 510275, P. R. China.
Journal of the American Chemical Society
|February 18, 2016
概括
五角二Dy(III) 单离子磁体 (SIM) 的合成用于抑制磁化量子道 (QTM). 这些新型SIM具有高能障碍,并记录磁性歇斯底里温度,推进数据存储的分子磁性.
科学领域:
- 分子磁性
- 量子计算材料
- 纳米技术
背景情况:
- 单分子磁铁 (SMM) 对高密度数据存储和量子处理具有前景.
- 单离子磁铁中的磁化量子道 (QTM) 限制了放松时间.
- 抑制QTM对于提高SMM性能至关重要.
研究的目的:
- 设计和合成具有五边形双金字塔对称性的Dy(III) SIM.
- 研究这种对称性对抑制QTM的影响.
- 探索它们的潜在磁性应用.
主要方法:
- 五边形二Dy (III) 复合物的合成: [Dy (Cy3PO) 2 (H2O) 5]Cl3· (Cy3PO) ·H2O·EtOH (1) 和 [Dy (Cy3PO) 2 (H2O) 5]Br3·2 (Cy3PO) ·2H2O·2EtOH (2).
- 磁性表征以评估SMM特性,能量障碍和磁性歇斯底里.
- 为了了解底层的磁性行为,
主要成果:
- 合成了两种具有五边形双金字塔形状的新型Dy(III) SIM.
- 对复合体1的472(7) K和对复合体2的543(2) K的观察到的高能量障碍.
- 对复合体2的磁性歇斯底里温度达到20K,表明QTM被抑制.
结论:
- 五角二平面对称性有效地抑制Dy (III) SIM中的QTM.
- 这些发现表明了分子磁性应用的巨大潜力.
- 基于对称的设计是开发先进磁性材料的强大策略.
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