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通过自处理合成的半导体-金属纳米花混合结构

Ori Hazut¹, Sharon Waichman¹, Thangavel Subramani¹

¹Institute of Chemistry and the Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem , Edmond J. Safra Campus, Givat Ram, Jerusalem, 91904, Israel.

Journal of the American Chemical Society

|March 15, 2016

概括

我们开发了纳米花混合纳米结构的自处理合成. 这种方法使用半导体纳米线不对称性用于局部湿化学步骤,在SiGe纳米线上创建金属纳米盖,用于等离子应用.

科学领域:

* 纳米技术
* 材料科学
* 表面化学

背景情况:

* 半导体纳米线 (NW) 具有固有的不对称性,可用于控制合成.
催化化学蒸汽沉积 (CVD) 产生不对称的NW.
*金属半导体连接可以激活局部化学反应.

研究的目的:

* 提出一种创新的合成策略,用于创建混合纳米结构.
在局部的尖端区域修改中使用NW不对称性.
* 开发一个单步自处理合成纳米花结构.

主要方法:

* 用于半导体纳米线合成的Au催化CVD.
使用湿化学方法进行局部蚀刻,沉积和修饰.
*使用现场传输电子显微镜 (TEM),现场扫描传输电子显微镜 (STEM) 和感应合等离子体质谱法 (ICP-MS) 监测合成.

主要成果:

*使用硬币金属 (Cu,Ag,Au) 开发了Nanofloret混合纳米结构 (SiGe NW与金属纳米外).
* 展示了一个可编程的事件级联,用于自主的一步合成 (自处理合成).
*确定了关键的合成步骤:局部氧化蚀刻,金属沉积和工艺终结,具有可控制的参数 (蚀刻剂度,合金组成,还原剂,金属氧化还原潜力,表面活性剂).

结论:

* 自处理合成使得Nanofloret混合纳米结构的高效,单步制造成为可能.
* 这些纳米结构具有广泛的等离子体吸收,适用于表面增强拉曼散射 (SERS) 等应用.
通过各种合成参数,该方法可以精确控制纳米结构的形态和特性.

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