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Updated: Jun 20, 2026

Preparation of Liquid-exfoliated Transition Metal Dichalcogenide Nanosheets with Controlled Size and Thickness: A State of the Art Protocol
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Published on: December 20, 2016

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将MoS2晶体控制剥离成三层纳米板

Xiaobin Fan1,2, Pengtao Xu2, Yuguang C Li2

  • 1State Key Laboratory of Chemical Engineering, Collaborative Innovation Center of Chemical Science and Engineering, School of Chemical Engineering and Technology, Tianjin University , Tianjin 300072, China.

Journal of the American Chemical Society
|April 1, 2016
PubMed
概括

研究人员开发了一种使用n-butyllithium去皮的新方法. 这种技术有效地产生了少层的MoS2,对于先进的材料研究和电子设备至关重要.

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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