在金属氧化物半导体上合成的合有机纳米线的带分散
Guillaume Vasseur1,2, Mikel Abadia1, Luis A Miccio1,2
1Centro de Física de Materiales (Consejo Superior de Investigaciones Científicas (CSIC)/Universidad del País Vasco (UPV)-Euskal Herriko Unibertsitatea (EHU)-Materials Physics Center (MPC) , Paseo Manuel Lardizabal 5, 20018 San Sebastián, Spain.
Journal of the American Chemical Society
|April 27, 2016
概括
研究人员在半导体二氧化上合成了聚 (p-) 链. 这一突破使得在低导电表面上创建新的分子半导体设备成为可能.
科学领域:
- 材料科学
- 表面化学
- 纳米技术
背景情况:
- 表面限制的脱使得碳纳米结构的自下而上的合成成为可能.
- 目前的方法需要金属表面,限制在低导率基板上的应用.
研究的目的:
- 在半导体TiO2上合成有序的聚烯链.
- 在过渡金属氧化物表面合成碳纳米结构的可行性.
主要方法:
- 4,4′′-二甲前体的脱同.
- 低能电子衍射 (LEED) 和扫描道显微镜 (STM) 用于相位识别.
- 用于化学和电子表征的X射线光电子光谱 (XPS) 和角度分辨光辐射光谱 (ARPES).
主要成果:
- 在TiO2上成功合成了有序的聚烯链.
- 通过变化基质温度来实现超分子和聚合物阶段的区别.
- 在475K左右观察到脱的开始.
- 通过光谱证据证实通过高度分散的波段成功聚合.
结论:
- 在过渡金属氧化物表面上可以合成精确的碳纳米结构.
- 这为新型分子半导体设备的自下而上的生产打开了前景.
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