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半导体和金属单壁碳纳米管的控制生长

Chang Liu1, Hui-Ming Cheng1

  • 1Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Shenyang 110016, China.

Journal of the American Chemical Society
|May 6, 2016
PubMed
概括

研究人员正在开发方法来控制单壁碳纳米管 (SWCNT) 的电特性. 这一进步旨在通过实现统一的半导体或金属类型来克服用于电子的SWCNT的挑战.

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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...