非常小的带隙 π-结合聚合物与扩展基诺酸
Kohsuke Kawabata1, Masahiko Saito1, Itaru Osaka1
1Emergent Molecular Function Research Group, Center for Emergent Matter Science, RIKEN , Wako, Saitama 351-0198, Japan.
Journal of the American Chemical Society
|May 26, 2016
概括
合成了具有形性质的新型π合聚合物,其中基化物作为缺电子单元. PBDTD4T实现了非常小的带隙 (0.88 eV) 和双极电荷传输,对有机电子有希望.
科学领域:
- 材料科学
- 有机电子
- 聚合物化学
背景情况:
- 减少π合聚合物的带隙对于提高其在有机电子设备中的性能至关重要.
- 结合形特征是减少带隙的有效策略.
研究的目的:
- 合成具有强电子缺陷的基诺单元的新型聚合物.
- 调查基诺酸 (2,2'-比提奥-5,5'-二,BTD) 和二二 ([1,2-b:4,5-b]二-2,6-二,BDTD) 单元对聚合物性能的影响.
- 评估合成聚合物的电荷传输特性和光学特性.
主要方法:
- 合成新的π结合聚合物PBTD4T和PBDTD4T,其中包括BTD和BDTD受体单元.
- 聚合物的特性,包括LUMO能量水平,带隙和透明度.
- 评估电荷传输特性,特别是孔和电子移动性.
主要成果:
- PBTD4T的LUMO值为-3.77 eV,带隙为1.28 eV.
- PBDTD4T显示出更深的LUMO -4.04 eV和0.88 eV的显著较小的带隙,具有高可见透明度.
- PBTD4T和PBDT4T都显示出平衡的双极电荷传输,性能优于参考聚合物 (PTTD4T).
结论:
- 整合BDTD单元导致带隙大幅减少和近红外活动的增强.
- 合成的聚合物表现出有希望的平衡双极电荷传输特性.
- 这些 π 结合的聚合物适合制造下一代有机电子设备.
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