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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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在空位排序的双矿半导体Cs2SnI6和Cs2TeI6中对缺陷的耐受性和不耐受性

Annalise E Maughan1, Alex M Ganose2,3, Mitchell M Bordelon1

  • 1Department of Chemistry, Colorado State University , Fort Collins, Colorado 80523-1872, United States.

Journal of the American Chemical Society
|June 11, 2016
PubMed
概括

在Cs2SnI6矿中替代,通过阻碍空位的形成,意外地降低了导电性. 这项研究阐明了光伏应用中的双矿的容错性.

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