矿CH3NH3PbI3 ((Cl) 单晶:溶液生长迅速,无与伦比的晶体质量,陷密度低至10 ((8) 厘米)
Zhipeng Lian1, Qingfeng Yan1, Taotao Gao1
1Department of Chemistry, Tsinghua University , Beijing 100084, China.
Journal of the American Chemical Society
|July 27, 2016
概括
大型混合矿CH3NH3PbI3 ((Cl) 的单晶迅速生长,具有卓越的晶体质量. 这一突破使得高性能光电子设备成为可能,
科学领域:
- 材料科学
- 固态物理
- 光电子产品
背景情况:
- 高晶质单晶对于先进的设备性能至关重要.
- 矿材料具有有前途的光电子特性,但通常存在晶体缺陷.
- 之前对化甲基 (CH3NH3PbI3) 单晶的研究报告说,其晶体质量较差.
研究的目的:
- 开发一种高质量的甲基化 (CH3NH3PbI3(Cl)) 单晶的快速生长方法.
- 评估合成单晶的晶体质量和光电子特性.
- 展示这些材料在高性能光电子应用中的潜力.
主要方法:
- 从含的溶液中快速形成CH3NH3PbI3 ((Cl) 的晶体.
- 高分辨率的X射线摇摆曲线 (HR-XRC) 测量以确定晶体质量 (半最大宽度,fwhm).
- 包括陷状态密度,载体移动性和载体寿命在内的光电子特性.
主要成果:
- 在5天内成功生长出大型CH3NH3PbI3 ((Cl) 单晶 (高达20mm × 18mm × 6mm).
- 获得了前所未有的晶体质量,fwhm为20弧秒,明显优于之前报告的值 (∼1338弧秒).
- 观察到优良的光电子特性:陷状态密度低至7.6 × 10 ((8) cm ((-3),载体移动性为167 ± 35 cm ((2) V ((-1) s ((-1)) 和载体寿命为449 ± 76 μs.
结论:
- 快速生长的方法产生混合单晶,具有卓越的晶体质量.
- 增强的晶体质量直接转化为更好的光电子特性,包括低陷密度和高载体移动性/寿命.
- 这些最先进的单晶CH3NH3PbI3 ((Cl) 材料非常适合新一代光电子设备.
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