具有卓越稀释铁磁半导体性能的无缺陷多ZrO2纳米结构
Md Anisur Rahman1, S Rout1, Joseph P Thomas1
1WATLab and Department of Chemistry, University of Waterloo , Waterloo, Ontario N2L 3G1, Canada.
Journal of the American Chemical Society
|August 18, 2016
概括
我们开发了新型无剂ZrO2纳米结构, 具有高基里温度 (700K) 和显著的磁化. 在这些先进的磁性材料中控制铁磁性是氧空缺缺陷,而不是ZrO2阶段.
科学领域:
- 材料科学
- 凝聚物质物理学
- 纳米技术
背景情况:
- 基于旋转的电子技术比传统的基于电荷的技术具有潜在的优势.
- 挑战包括由于剂问题,现有半导体材料的低基里温度和低自旋注入效率.
研究的目的:
- 开发用于自旋电子的无剂磁性半导体材料.
- 研究氧空缺缺陷在ZrO2纳米结构中控制铁磁性的作用.
主要方法:
- 用催化剂辅助的脉冲激光沉积来生长ZrO2纳米结构.
- 磁性特性和缺陷结构的表征.
主要成果:
- 成功培养出富含氧气空缺,无剂的ZrO2纳米结构,具有高基里温度 (700K) 和磁化 (5.9emu/g).
- 证明氧气空缺缺陷, 而不是ZrO2的相, 决定铁磁秩序.
- 提出了一个新的缺陷诱导的极子模型.
结论:
- 氧空位工程是一种可行的策略,用于制造高性能,无添加剂的稀释铁磁半导体氧化物.
- 这些发现为设计新型的多功能磁性材料铺平了道路.
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