混合单层螺旋最大限度地通过分子-电极接口的光异构化来切换导电性
Sumit Kumar1, Jochem T van Herpt1,2, Régis Y N Gengler1
1Zernike Institute for Advanced Materials , Nijenborgh 4, 9747 AG Groningen, The Netherlands.
Journal of the American Chemical Society
|September 8, 2016
概括
在分子连接处观察到光导电的切换. 紫外线激发电流密度的显著增加, 显示出分子电子应用的潜力.
科学领域:
- 分子电子
- 纳米技术
- 材料科学
背景情况:
- 在分子连接处的导电量切换对于先进的电子设备至关重要.
- 自组装单层 (SAM) 为控制纳米级电子属性提供了一个平台.
研究的目的:
- 通过使用基于spiropyran的SAM来研究道结的光导电性切换.
- 探索分子结构和组成对切换效率的影响.
主要方法:
- 采用体- (EGaIn) 顶部接触器和螺旋 SAM 的道连接器的制造.
- 在紫外线照射下测量电流密度 (J) 的变化.
- 使用六乙醇混合单层的分析.
- 密度功能理论 (DFT) 的计算和模拟的传输光谱.
主要成果:
- 在紫外线照射中观察到电流密度 (J) 增加了35倍,从而诱导了环开放.
- 与纯螺旋单层相比,使用六乙醇混合单层可以获得更高的切换值.
- 第一次切换事件显示完全恢复,随后的化不是由于单层降解.
- DFT计算支持通过Fermi水平附近状态密度的变化观察到的导电率增加.
结论:
- 在螺旋SAM中,光诱导电导切换是可行的和有效的.
- 混合单层增强开关性能,为优化分子电子设备提供了途径.
- 这项研究提供了对光响应分子结合的电子机制的基本见解.
相关概念视频
Metal-Semiconductor Junctions
1.2K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.2K
Thermal and Photochemical Electrocyclic Reactions: Overview
3.2K
Electrocyclic reactions are reversible reactions. They involve an intramolecular cyclization or ring-opening of a conjugated polyene. Shown below are two examples of electrocyclic reactions. In the first reaction, the formation of the cyclic product is favored. In contrast, in the second reaction, ring-opening is favored due to the high ring strain associated with cyclobutene formation.
3.2K
P-N junction
1.5K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.5K


