使用二维过渡金属碳化物 (MXenes) 进行电磁干扰屏蔽
Faisal Shahzad1, Mohamed Alhabeb2, Christine B Hatter2
1Materials Architecturing Research Center, Korea Institute of Science and Technology, 5, Hwarang-ro 14-gil, Seongbuk-gu, Seoul 02792, Republic of Korea. Nanomaterials Science and Engineering, University of Science and Technology, 217, Gajung-ro, Yuseong-gu, Daejeon 34113, Republic of Korea.
概括
柔性和导电性MXene薄膜提供优质的电磁干扰 (EMI) 屏蔽. 一个薄的碳化 (Ti3C2Tx) 薄膜实现了92分贝的EMI屏蔽,展示了MXenes
科学领域:
- 材料科学
- 纳米技术
- 电气工程
背景情况:
- 具有灵活性和高导电性的先进材料对于有效的电磁干扰 (EMI) 屏蔽至关重要.
- 像MXenes这样的二维 (2D) 材料具有金属导电性和水友性质,使它们成为薄膜应用的前景.
研究的目的:
- 研究各种MXenes及其聚合物复合物的高性能EMI屏蔽的潜力.
- 根据MXene薄膜的导电性和结构性质来评估EMI屏蔽的有效性.
主要方法:
- 制造独立的MXene薄膜,特别是Ti3C2Tx.
- 测量MXene膜的电导率和EMI屏蔽效率 (SE).
- 薄膜厚度和结构性质的表征
主要成果:
- 一个45微米厚的Ti3C2Tx薄膜显示出92分贝的特殊的EMI屏蔽效果.
- 一个较薄的2.5微米薄膜实现了超过50分贝的SE,突出了可扩展性.
- 这种高性能归因于Ti3C2Tx片中的优良电导率 (4600 S/cm) 和多重内部反射.
结论:
- MXene薄膜,特别是Ti3C2Tx,在最小厚度下表现出最先进的EMI屏蔽性能.
- 由于MXenes的机械灵活性和易于加工成薄膜,使其可用于保护复杂的表面.
- MXenes及其复合材料在开发高效和可适应的EMI屏蔽解决方案方面取得了重大进展.
相关概念视频
Diamagnetic Shielding of Nuclei: Local Diamagnetic Current
1.5K
An applied magnetic field causes the electrons present in the molecule to circulate, setting up a local diamagnetic current within the molecule. The local diamagnetic current arising from circulating sigma-bonding electrons induces a magnetic field, Blocal that opposes the applied magnetic field, B0. The effective magnetic field experienced by these nuclei is given by the difference between the applied and local magnetic fields in a phenomenon called local diamagnetic shielding. Essentially,...
1.5K
Metal-Semiconductor Junctions
1.2K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.2K
Properties of Transition Metals
30.5K
Transition metals are defined as those elements that have partially filled d orbitals. As shown in Figure 1, the d-block elements in groups 3–12 are transition elements. The f-block elements, also called inner transition metals (the lanthanides and actinides), also meet this criterion because the d orbital is partially occupied before the f orbitals.
30.5K
Biasing of Metal-Semiconductor Junctions
761
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
761
π Electron Effects on Chemical Shift: Overview
1.9K
An applied magnetic field causes loosely bound π-electrons in organic molecules to circulate, producing a local or induced diamagnetic field over a large spatial volume. As the molecules tumble in solution, the field generated by π-electrons in spherical substituents results in a zero net field. However, the net field generated by π-electrons in non-spherical substituents is not zero. The effect of this induced field depends on the orientation of the molecule with respect to B0,...
1.9K
Theory of Metallic Conduction
1.9K
The conduction of free electrons inside a conductor is best described by quantum mechanics. However, a classical model makes predictions close to the results of quantum mechanics. It is called the theory of metallic conduction.
In this theory, Newton's second law of motion is used to determine the acceleration of an electron in the presence of an applied electric field. Then, its velocity is expressed via this acceleration.
An electron moves through the crystal, containing positive ions,...
In this theory, Newton's second law of motion is used to determine the acceleration of an electron in the presence of an applied electric field. Then, its velocity is expressed via this acceleration.
An electron moves through the crystal, containing positive ions,...
1.9K


