用于欧姆接触的超高和超低工作功能的多半导体
Cindy G Tang1,2, Mervin C Y Ang2,3, Kim-Kian Choo3
1Department of Physics, National University of Singapore, Lower Kent Ridge Road, S117550 Singapore.
Nature
|November 25, 2016
概括
研究人员开发了可调节工作功能的自补偿合聚合物,使有机电子中的高效欧姆接触成为可能. 这一突破克服了高性能半导体设备实现极端工作功能的局限性.
科学领域:
- 材料科学
- 有机电子
- 半导体物理
背景情况:
- 高性能半导体设备需要有效的欧姆接口来进行高效的电流注入.
- 实现电极所需的工作功能对于注入孔和电子至关重要,但对于溶液加工材料来说具有挑战性.
- 现有的合聚合物有机半导体的工作功能范围有限,特别是超高工作功能和超低工作功能.
研究的目的:
- 开发一种具有广泛工作功能的溶液加工合聚合物薄膜的总体策略.
- 克服被化有机半导体中化稳定性和化物迁移的局限性.
- 展示这些材料在制造高性能有机电子设备中的应用.
主要方法:
- 电荷合聚电解质,然后进行内部离子交换,以产生自我补偿的强合聚合物.
- 使用共价键对离子来补偿聚合物骨干上的移动载体.
- 采用双阶段的兴奋剂和补偿过程,使强烈的兴奋剂可用于极端的工作功能.
主要成果:
- 通过溶液处理获得具有广泛工作功能范围 (3.0-5.8 eV) 的合膜.
- 已证明有机发光二极管,太阳能电池,光二极管和晶体管的有效溶液处理的欧姆接触.
- 展示了孔和电子的欧姆注入到多中,并将金属电极转化为高效的注入接触.
结论:
- 开发的自补偿策略可以在化聚合物中获得极端的工作功能.
- 这种方法为制造具有可调节的欧姆接触的高性能有机电子设备提供了一种多功能方法.
- 该策略在有机电子以外的各种先进半导体材料中具有应用潜力.
相关概念视频
Metal-Semiconductor Junctions
1.2K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.2K
Semiconductors
1.8K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.8K
Fermi Level Dynamics
899
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
899
Types of Semiconductors
1.6K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.6K


