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通过自调速热升华制造的GeSe薄膜太阳能电池

Ding-Jiang Xue^1,2, Shun-Chang Liu^1,2, Chen-Min Dai³

¹Beijing National Laboratory for Molecular Sciences, Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190, China.

Journal of the American Chemical Society

|December 21, 2016

概括

研究人员开发了一种快速的热升华工艺,以创建高质量的化 (GeSe) 薄膜,克服相位杂质问题. 这一突破使得能够制造具有有前途的光伏潜力的稳定薄膜太阳能电池.

科学领域:

材料科学
固态物理
可再生能源

背景情况:

由于其有利的特性和元素的丰富性,化 (GeSe) 作为光伏吸收器具有前景.
之前使用GeSe的光伏设备受到相位杂质 (Ge,GeSe2) 的阻碍,导致缺陷和性能差.

研究的目的:

开发一种用于光伏应用的高质量的GeSe薄膜制造方法.
克服相位杂质和GeSe中的有害点缺陷的挑战.

主要方法:

一个快速热升华 (RTS) 工艺是基于分层GeSe的升华特性而设计的.
该RTS工艺净化原材料并确保同质化,防止缺陷的形成.
该方法也用于制造硫化 (GeS) 薄膜.

主要成果:

使用现场自调RTS工艺成功制造出高质量的多晶GeSe薄膜.
使用这些GeSe薄膜制成的太阳能电池的功率转换效率为1.48%.
制造的设备表现出良好的运行稳定性.

结论:

开发的RTS工艺有效地抑制GeSe薄膜中的相位杂质和点缺陷.
根据所获得的效率和稳定性,GeSe是薄膜光伏应用的可行材料.
RTS方法显示出制造其他二进制IV-VI石化膜的潜力.

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