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两维混合矿中的宽带辐射:结构变形的作用

Daniele Cortecchia^1,2, Stefanie Neutzner², Ajay Ram Srimath Kandada²

¹Interdisciplinary Graduate School, Energy Research Institute @ NTU(ERI@N), Nanyang Technological University , 639798 Singapore.

Journal of the American Chemical Society

|December 28, 2016

概括

二维化矿的结构扭曲会影响缺陷的形成,导致宽带光发光. 这些结构的工程控制这些软材料的光电子特性.

科学领域:

材料科学
固态物理
光电子产品

背景情况:

二维 (2D) 化矿具有独特的光发特性.
这些材料的宽带光发不普遍存在,需要特定的条件.

研究的目的:

调查二维化矿的结构扭曲和缺陷形成之间的关系.
在特定的矿系统中了解宽带光发光的起源.

主要方法:

两种2D原型矿系统的比较研究: (n-丁) 2PbI4和 (2,2-二氧化) bis)) PbI4.
结构参数分析,包括Pb-X键的长度和X-Pb-X键的角度.
结构扭曲与缺陷性和光发性质的相关性.

主要成果:

与 (n-butylammonium) 2PbI4相比,PbI4矿的结构变形较大.
具有较大的结构扭曲的系统表现出V_F色中心的形成.
V_F色中心的辐射衰变直接导致光发光的扩大.

结论:

结构扭曲对于调节二维化矿的缺陷形成能量和缺陷性至关重要.
由于特定的结构变形,V_F色中心的形成是宽带光发光的原因.
战略结构工程为控制和优化这些软矿材料的光电子特性提供了途径.

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