多功能金属有机框架的动态间隔装置:实现超高甲储存工作能力的多功能MOF的新方向
Cheng-Xia Chen1, Zhang-Wen Wei1, Ji-Jun Jiang1
1MOE Laboratory of Bioinorganic and Synthetic Chemistry, Lehn Institute of Functional Materials, School of Chemistry, Sun Yat-Sen University , Guangzhou 510275, China.
Journal of the American Chemical Society
|April 8, 2017
概括
这项研究引入了基于的多功能金属有机框架 (Zr-MOF) 用于多种应用. 通过交换分子间隔器,MOF实现了可调节的功能,包括气体分离和超高甲储存.
科学领域:
- 材料科学
- 化学学
- 纳米技术
背景情况:
- 金属有机框架 (MOF) 提供可调节的孔隙性和功能性.
- 开发具有适应性特性的多功能MOF仍然是一个挑战.
- Zr-MOF以其强度和化学稳定性而闻名.
研究的目的:
- 用一个强大的Zr-MOF (LIFM-28) 展示多功能MOF的摇摆或多功能策略.
- 探索可逆安装/卸载间隔器以实现特定任务的MOF调整.
- 实现各种应用的多功能切换,包括气体分离和甲储存.
主要方法:
- 使用强大的Zr-MOF (LIFM-28) 具有可更换的协调位点.
- 使用不同长度和功能组的两种类型的间隔器进行可逆安装/卸载.
- 采用七个较短和六个较长的间隔器的直角优化方法来调整MOF功能.
主要成果:
- 成功展示了多功能MOF的摇摆或多功能策略.
- 实现了可调节的功能,包括气体分离,催化,点击反应和发光.
- 使用修改后的MOF在5 - 80bar和298K的超高甲储存工作容量.
结论:
- 开发的策略使单个父MOF能够通过间隔器修改来执行多种任务.
- 当LIFM-28 MOF与适当的间隔器功能化时,在气体分离和甲存储方面表现出色.
- 这种方法为设计适应性和多功能材料的各种化学应用提供了有希望的途径.
相关概念视频
Atomic Force Microscopy
3.1K
Atomic force microscopy (AFM) is a type of scanning probe microscopy that can analyze topographic details of various specimens like ceramics, glass, polymers, and biological samples. AFM offers over 1000 times more resolution than the optical imaging system. Images generated from AFM are three-dimensional surface profiles, offering an advantage over the flat, two-dimensional images from other imaging techniques.
The AFM Probe
The probe is regarded as the heart of any AFM setup and comprises the...
The AFM Probe
The probe is regarded as the heart of any AFM setup and comprises the...
3.1K
Metal-Semiconductor Junctions
1.4K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.4K
MOS Capacitor
1.8K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.8K
MOSFET: Enhancement Mode
1.1K
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
1.1K


