缺陷抗矿化合物Hg3Q2I2 (Q=S,Se和Te) 用于室温硬辐射检测

Yihui He1, Oleg Y Kontsevoi1, Constantinos C Stoumpos1

  • 1Department of Chemistry, ‡Department of Materials Science and Engineering, §Department of Electrical Engineering and Computer Science, and ∥Department of Physics and Astronomy, Northwestern University , Evanston, Illinois 60208, United States.

概括

像Hg3Se2I2这样的高Z合物显示为室温半导体探测器的X射线和马射线. Hg3Se2I2具有优异的性能,可以实现对α粒子和马射线的光谱分辨率.

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