低导热性和高热电性能在 (GeTe) 1-2x (GeSe) x (GeS) x:固体溶液和相位分离之间的竞争
Manisha Samanta1, Kanishka Biswas1
1New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) , Jakkur P.O., Bangalore 560064, India.
Journal of the American Chemical Society
|June 20, 2017
概括
这项研究引入了Sb-doped (GeTe) 1-2x,一个新的无热电材料. 它实现了低晶格导热率和高功率 (ZT=2.1在630K) 的高效能量转换.
科学领域:
- 材料科学
- 固态物理
- 热电器
背景情况:
- 化 (GeTe) 和其衍生物是有前途的无热电材料.
- 在GeTe中,高晶格导热率 (κlat) 阻碍了最佳的热电性能.
研究的目的:
- 降低格子的导热性并提高GeTe系统中的热电功率 (ZT).
- 研究Sb-doping和同时Se/S替代对热电性能的影响.
主要方法:
- 两个阶段的策略,包括在GeTe中同时替换Se和S,然后合金化Sb.
- 使用火花等离子烧结 (SPS) 进行材料加工.
- 分析声子散射机制,包括质量波动,点缺陷和粒度边界.
主要成果:
- 实现显著低的晶格导热率 (κlat ≈ 0.7 W/m·K).
- 在Sb-doped (GeTe)1-2x(GeSe)x(GeS)x中显示出高的热电功率 (ZT = 2.1 在630K).
- 与原始GeTe相比,观察到增强的维克尔微硬度,表明机械稳定性得到改善.
结论:
- 通过固体溶液点缺陷的声子散射,Sb-doping和同时的Se/S替代有效地减少了 κlat.
- 开发的材料具有出色的热电性能和机械稳定性,使其适合实际应用.
- 这些发现突显了伪三极化物在高效的热电能转换方面的潜力.
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