相关实验视频

Updated: May 26, 2026

Fabrication of Carbon Nanotube High-Frequency Nanoelectronic Biosensor for Sensing in High Ionic Strength Solutions
12:20

Fabrication of Carbon Nanotube High-Frequency Nanoelectronic Biosensor for Sensing in High Ionic Strength Solutions

Published on: July 22, 2013

18.8K

碳纳米管晶体管缩放到40纳米的尺寸

Qing Cao1, Jerry Tersoff2, Damon B Farmer2

  • 1IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598, USA. qcao@us.ibm.com.

Science (New York, N.Y.)
|July 1, 2017
PubMed
概括

研究人员使用单个碳纳米管开发了p通道晶体管,显著减少了尺寸并提高了电流密度. 这一突破使半导体技术向未来电子设备的40纳米目标迈进.

更多相关视频

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology09:20

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Published on: December 7, 2015

8.2K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

10.6K

相关概念视频

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...