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通过调节相位过渡温度提高多晶SnSe的p型热电性能

Yong Kyu Lee1, Kyunghan Ahn, Joonil Cha1

  • 1Center for Nanoparticle Research, Institute for Basic Science (IBS) , Seoul 08826, Republic of Korea.

Journal of the American Chemical Society
|July 15, 2017
PubMed
概括

研究人员提高了多晶锡化物 (SnSe) 的热电性能. 用化 (PbSe) 合金和化 (Na) 提高了电导率和降低了热导率,达到1.2的峰值值 (ZT).

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相关概念视频

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...