分子结合中的校正控制:接触效应和分子签名
Quyen van Nguyen1,2, Pascal Martin1, Denis Frath1
1Université Paris Diderot , Sorbonne Paris Cité, ITODYS, UMR 7086 CNRS, 15 rue Jean-Antoine de Baïf, 75205 Paris Cedex 13, France.
Journal of the American Chemical Society
|August 8, 2017
概括
使用薄的寡合物层的固态分子结合显示出高的整形比率. 分子轨道能量显著影响电流和设备性能.
科学领域:
- 分子电子
- 固态物理
- 纳米技术
背景情况:
- 分子连接对于开发先进的电子设备至关重要.
- 了解通过分子层的电荷传输是控制设备功能的关键.
研究的目的:
- 研究分子轨道能量对固态分子结合中的电荷传输的影响.
- 探索具有不同电子特性的分子层的整形特性.
- 阐明分子结合中调节电流和整流的机制.
主要方法:
- 使用电化学还原的二试剂制造固态分子连接,以在金电极上形成薄的寡合物层 (7-9 nm).
- 沉积Ti/Au顶部接触以完成分子连接结构.
- 设备性能,包括电流-电压 (I-V) 测量,在一系列的温度.
主要成果:
- 基于Oligo ((bistienylbenzene) 的分子层,HOMO接近黄金费米水平,在2.7V时表现出高的整正比率 (>1000).
- 具有高HOMO-LUMO差距分子 (四二) 的器件显示没有整合,而接受分子 (纳二) 则反转了整合方向.
- 在低温 (7K) 持续,在7K到100K之间没有激活.
结论:
- 分子连接中的纠正受不对称接触和分子层的特定轨道能量的影响.
- 电荷传输中的"分子特征"在较厚的层中显而易见,与直接道化制度不同.
- 这些发现表明,费米级别的固定和电子合在纠正机制中起着重要作用.
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