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Updated: Feb 25, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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用于模拟计算的纳米级NbO2Mott记忆器中的混乱动态

Suhas Kumar, John Paul Strachan, R Stanley Williams

    Nature
    |August 10, 2017
    PubMed
    概括

    研究人员开发了能够产生可控混乱动态的新型二氧化物 (NbO2) Mott 记忆器. 这些纳米级设备可以通过在复杂网络中实现更高效,更准确的解决问题来推进神经启发的计算.

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