在dysprosocenium中以60克尔文的分子磁性歇斯底里
Conrad A P Goodwin1, Fabrizio Ortu1, Daniel Reta1
1School of Chemistry, The University of Manchester, Oxford Road, Manchester M13 9PL, UK.
Nature
|August 25, 2017
概括
研究人员开发了一种新型的dysprosium复合体, 这一突破提升了分子磁性数据存储,
科学领域:
- 材料科学
- 量子计算
- 纳米技术
背景情况:
- 对于量子信息和分子级数据存储, 兰化物正在被探索.
- 单分子磁铁 (SMM) 显示磁性歇斯底里,这是数据存储的关键,但通常在低温下工作.
- 之前的SMM实现了有限的歇斯底里温度,缓慢的扫描速度.
研究的目的:
- 开发一种基于化物的单分子磁铁,具有显著增强的磁性歇斯底里.
- 在更高的温度下研究分子磁性数据存储的潜力.
主要方法:
- 合成一个六-丁复合物:[Dy(Cpttt) 2][B(C6F5) 4.
- 磁性表征以确定磁性歇斯底里性质.
- 可变温度磁性测量和放松动态研究.
- 开始计算以建模旋转动力学和放松机制.
主要成果:
- 合成的复合物呈现出高达60克尔文的磁性歇斯底里,
- 在60克尔文时观察到放松动态的明显变化,在稀释样本中持续存在.
- 一开始的计算证实了局部分子振动是高温磁放松的原因.
结论:
- 这种新型的dysprosium复合体显示了SMM前所未有的高温磁性歇斯底里.
- 对于实现高温磁性记忆的关键是特有的局部金属连接体振动模式.
- 在高于液温度的单分子磁性数据存储中,
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