具有最高基里温度和最快极化切换的多轴分子铁电器
Yuan-Yuan Tang1, Peng-Fei Li1, Wan-Ying Zhang1
1Ordered Matter Science Research Center, and Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University , Nanjing 211189, P. R. China.
一种新的分子铁电薄膜[Hdabco][ReO4]为有机电子产品提供了比聚乙烯化物更高的性能. 它具有高基里温度和快速切换速度,非常适合高级数据存储应用.
科学领域:
- 材料科学
- 有机电子
- 铁电材料
背景情况:
- 聚乙烯化物 (PVDF) 是用于数据存储的经典有机铁电.
- 对于大规模集成,PVDF在晶体性,强迫场和热稳定性方面面临限制.
- 分子铁电提供了一个有机铁电材料的替代类别.
研究的目的:
- 研究[Hdabco][ReO4]作为分子铁电薄膜的潜力.
- 评估[Hdabco][ReO4]作为数据存储应用中可行的PVDF替代品.
- 描述[Hdabco][ReO4]的铁电特性.
主要方法:
- [Hdabco][ReO4]分子铁电薄膜的制造.
- 克里温度的测量
- 对偏振切换速度的评估.
- 剩余极化和强制电压的量化.
主要成果:
- [Hdabco][ReO4]在分子铁电中表现出最高的库里温度 (499.6K).
- 实现了分子铁电中最快的极化切换速度 (100 kHz).
- 证明了很大的残余极化 (~9μC/cm2) 和低强制电压 (~10V).
- 具有独特的多轴铁电性质.
结论:
- [Hdabco][ReO4]是PVDF的一个有前途的分子铁电替代品.
- 它的特性适用于下一代灵活,可穿戴和生物设备.
- 为先进的有机电子数据存储应用提供增强的性能.
更多相关视频
08:00Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
Published on: March 27, 2018
10:40A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
相关概念视频
Ferromagnetism
Dielectric Polarization in a Capacitor
Types Of Superconductors
Paramagnetism
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Molecular and Ionic Solids
Molecular Solids
Molecular crystalline solids, such as ice, sucrose (table sugar), and iodine, are solids that are composed of neutral molecules as their constituent units. These molecules are held together by weak intermolecular forces such as London dispersion forces, dipole-dipole interactions, or hydrogen bonds, which...
