两维化的近红外短波线性二极化
Xiaoting Wang1, Yongtao Li1, Le Huang1
1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences , Beijing 100083, China.
Journal of the American Chemical Society
|September 20, 2017
概括
少数层的化物 (GeSe) 在短波近红外 (SW-NIR) 光谱中表现出显著的偏振依赖光学特性. 这种二维材料表现出强烈的异构反应,使其适用于先进的SW-NIR偏振检测应用.
科学领域:
- 材料科学
- 光电子产品
- 纳米技术
背景情况:
- 极化检测对于光学至关重要,在短波近红外 (SW-NIR) 范围 (700-1100 nm) 的需求日益增长.
- 二维 (2D) 二氧化物 (GeSe) 是一种IV-VI二氧化物,具有异构的层状形结构和狭窄的带间隙 (1.1-1.2 eV),表明了SW-NIR应用的潜力.
研究的目的:
- 为了研究2D GeSe晶体的异构光学特性.
- 评估GeSe在SW-NIR频段中适用于极化检测.
- 探索GeSe厚度与其线性二重化之间的关系.
主要方法:
- 在高质量的GeSe晶体上进行视角依赖拉曼光谱.
- 极化分辨率吸收光谱 (400-950 nm).
- 使用532,638和808nm的极化敏感光探测器的制造和测试.
主要成果:
- GeSe表现出明显的异构特征和可重现的偏振依赖吸收和光探测器反应.
- 观察到显著的吸收比率 (αy/αx) 和二色比率 (Ipy/Ipx),特别是在808nm (3.02和2.16,分别),表明强烈的SW-NIR异质.
- 对于大约8-16nm的中等厚度的GeSe样本,可以达到最佳的线性二重化.
结论:
- 几层GeSe在SW-NIR频谱中表现出显著的偏振依赖光学特征.
- 该材料在808nm左右表现出优异的异构反应,满足SW-NIR偏振检测的需求.
- 对于需要极化灵敏度的集成SW-NIR光学应用,GeSe是一个有前途的候选.
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