Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.2K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.2K
Bonding in Metals02:32

Bonding in Metals

53.8K
Metallic bonds are formed between two metal atoms. A simplified model to describe metallic bonding has been developed by Paul Drüde called the “Electron Sea Model”. 
53.8K
Covalent Bonds01:29

Covalent Bonds

165.7K
Overview
165.7K
Covalent Bonds01:08

Covalent Bonds

12.1K
Overview
When two atoms share electrons to complete their valence shells, they create a covalent bond. An atom's electronegativity—the force with which shared electrons are pulled towards an atom—determines how the electrons are shared. Molecules formed with covalent bonds can be either polar or nonpolar. Atoms with similar electronegativities form nonpolar covalent bonds; the electrons are shared equally. Atoms with different electronegativities share electrons unequally,...
12.1K
P-N junction01:11

P-N junction

1.4K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.4K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

698
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
698

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

First-Principles Analysis of Chirality-Induced Spin Selectivity at Molecule-Metal Interfaces in Photoemission.

Nano letters·2026
Same author

Revealing Metal-Node-Dependent Intralayer Conjugation and Thickness-Dependent Interlayer Interactions in Photoconductive MOFs.

The journal of physical chemistry letters·2026
Same author

Amplified chiroptic response in a multi-helical penta-perylene structure.

Chemical science·2026
Same author

Excitonic spin torque in a magnetic semiconductor.

Nature materials·2026
Same author

Electronic Origin of Delicate Antiferromagnetism in Fe_{x}NbS_{2}.

Physical review letters·2026
Same author

Designing effective single-molecule electromagnets with radially π-conjugated carbon structures.

Nature communications·2026

相关实验视频

Updated: Feb 21, 2026

Fabricating Nanogaps by Nanoskiving
07:36

Fabricating Nanogaps by Nanoskiving

Published on: May 13, 2013

11.7K

用于分子连接的电子透明Au-N键

Yaping Zang, Andrew Pinkard, Zhen-Fei Liu1

  • 1Molecular Foundry, Lawrence Berkeley National Laboratory, and Department of Physics, University of California , Berkeley, California 94720, United States.

Journal of the American Chemical Society
|October 6, 2017
PubMed
概括

研究人员为单分子电子开发了新的金属有机接口. 对寡二胺电线的电化学修改产生了高度导电状态,显著改善了未来分子设备的电子传输.

更多相关视频

Microscopic Visualization of Porous Nanographenes Synthesized through a Combination of Solution and On-Surface Chemistry
08:18

Microscopic Visualization of Porous Nanographenes Synthesized through a Combination of Solution and On-Surface Chemistry

Published on: March 4, 2021

2.2K
Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
10:32

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Published on: January 9, 2014

10.2K

相关实验视频

Last Updated: Feb 21, 2026

Fabricating Nanogaps by Nanoskiving
07:36

Fabricating Nanogaps by Nanoskiving

Published on: May 13, 2013

11.7K
Microscopic Visualization of Porous Nanographenes Synthesized through a Combination of Solution and On-Surface Chemistry
08:18

Microscopic Visualization of Porous Nanographenes Synthesized through a Combination of Solution and On-Surface Chemistry

Published on: March 4, 2021

2.2K
Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
10:32

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Published on: January 9, 2014

10.2K

科学领域:

  • 分子电子
  • 纳米科学
  • 电化学

背景情况:

  • 单分子连接对于分子电子非常重要.
  • 传统的dative连接具有导电性的限制.
  • 基胺分子提供了新的电子性质的潜力.

研究的目的:

  • 通过寡二导线研究单分子运输.
  • 探索电化学方法来提高连接电导率.
  • 开发电子透明的金属有机接口.

主要方法:

  • 在离子环境中测量单分子运输.
  • 金接触器的电化学修饰.
  • 基于密度功能理论 (DFT) 的运输计算.

主要成果:

  • 烯二胺电线表现出三个离散的导电状态.
  • 电化学转换Au←N键到Au-N接触增加了约20倍和约400倍的导电.
  • 达到了迄今为止最低的接触阻力.
  • DFT计算证实了增强的电子合.

结论:

  • 电化学修饰提供了高导电性金属-有机接口的简单途径.
  • 这种方法显著增强了单分子结合中的电子合.
  • 开发的接口显示了先进的分子电子设备的前景.