直接将伊米达分子装入高质子导电的金属有机框架
Yingxiang Ye1, Weigang Guo1, Lihua Wang1
1Fujian Provincial Key Laboratory of Polymer Materials, College of Chemistry and Materials Science, Fujian Normal University , 32 Shangsan Road, Fuzhou 350007, People's Republic of China.
Journal of the American Chemical Society
|October 27, 2017
概括
一种新的一步方法产生具有高质子导电性的伊米达注入金属有机框架 (NENU-3). 这种材料显著增强了先进应用的质子运输途径.
科学领域:
- 材料科学
- 化学学
- 纳米技术
背景情况:
- 金属有机框架 (MOF) 是各种应用的有希望的多孔材料.
- MOF中的质子导电性对于燃料电池等能源设备至关重要.
- 在MOF中控制客分子的结合会影响它们的特性.
研究的目的:
- 在稳定的MOF (NENU-3) 中开发一种易于结合的策略.
- 探讨伊米达结合方法对质子导电性的影响.
- 解释增强质子传输背后的机制.
主要方法:
- 使用一步合成策略将自由的伊米达分子纳入NENU-3.
- 用两步合成进行比较,结果是终端结合的伊米达.
- 使用单晶X射线衍射分析结构差异.
主要成果:
- 一步合成的材料,Im@(NENU-3),在90%的RH和70°C下达到1.82 × 10−2 S cm−1的高质子导电性.
- 两步合成的材料,Im-Cu@(NENU-3a,显示出明显较低的质子导电性 (3.16 × 10−4 S cm−1).
- 结构分析显示,Im@(NENU-3) 中的自由伊米达通过键网络促进了质子跳跃,而Im-Cu@(NENU-3a 中的结合伊米达则阻断了质子通路.
结论:
- 一个简单的单步方法通过结合自由的伊米达有效地提高了NENU-3的质子导电性.
- 在MOF毛孔中的伊米达分子的排列决定了质子传输效率.
- 这项工作为设计高性能导质子MOF提供了新的途径.
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