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通过引入Sn空隙,在多晶SnSe中实现高热电功率

Wei Wei1, Cheng Chang2, Teng Yang3

  • 1MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, School of Materials Science and Engineering, Nanjing University of Science and Technology , Nanjing 210094, China.

Journal of the American Chemical Society
|December 16, 2017
PubMed
概括

研究人员通过引入空位,在多晶化 (SnSe) 中实现了创纪录的高热电功率 (ZT) ~2.1. 这种突破增强了电特性,并降低了热导率,

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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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