Cu2I2Se6:用于室温光子检测的金属无机框架宽带间隔半导体
Wenwen Lin1, Constantinos C Stoumpos1, Oleg Y Kontsevoi1
1Department of Chemistry, ‡Department of Physics and Astronomy, #Northwestern-Argonne Institute of Science and Engineering, and §Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States.
Journal of the American Chemical Society
|January 16, 2018
概括
一种新的半导体,铜化 (Cu2I2Se6), 它的高稳定性和电特性使其适用于先进的光子和硬辐射探测器.
科学领域:
- 材料科学
- 固态物理
- 半导体物理
背景情况:
- 宽带半导体对于先进的辐射检测技术至关重要.
- 开发具有高稳定性和优良电子性能的新材料是一个持续的挑战.
研究的目的:
- 研究一种新型半导体Cu2I2Se6的特性,用于强辐射和光子检测.
- 描述其结构,电子和探测器性能.
主要方法:
- 电子带结构的密度函数理论 (DFT) 计算.
- 垂直布里奇曼方法用于单晶生长.
- 用于测量电子移动性的飞行时间技术.
主要成果:
- Cu2I2Se6具有广泛的间接带隙 (1.95 eV) 和高稳定性.
- 已成功培养出高电阻的厘米大小单晶 (>10^12 Ω·cm).
- 探测器对X射线具有很高的光敏度,对α粒子具有很好的光谱性能,电子流动性为~46cm^2·V^-1·s^-1.
结论:
- Cu2I2Se6是一个有前途的宽带半导体,用于硬辐射和光子检测.
- 它的性能,包括高电阻和电子流动性,与已知探测器材料相美.
- 对Cu2I2Se6的进一步研究可能会导致更好的辐射检测装置.
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