半导体/超导体的GaN/NbN表轴异构结构
Rusen Yan1, Guru Khalsa2, Suresh Vishwanath1
1School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA.
Nature
|March 9, 2018
概括
研究人员成功地在化 (NbN) 超导体上生长了半导体异构结构. 这一突破使得新型电子设备能够将超导与半导体特性结合起来.
科学领域:
- 材料科学
- 凝聚物质物理学
- 固态化学
背景情况:
- 半导体异构结构在晶体超导体上的直接表轴生长具有挑战性.
- 化 (NbN) 是一种晶体超导体.
- 宽带隙半导体包括碳化,化 (GaN) 和化 (AlGaN).
研究的目的:
- 在晶体超导体上展示半导体异构结构的直接表轴增长.
- 将化 (NbN) 超导体与宽带半导体集成.
- 探索结合超导和半导体性能的新型电子设备的潜力.
主要方法:
- 用于沉积的分子束表 (MBE).
- 在超薄的晶体NbN超导体上直接培养了AlGaN/GaN量子井异构结构.
- 使用超导体作为源负载制造半导体晶体管.
主要成果:
- 将AlGaN/GaN异构与NbN超导体成功集成
- 在二维电子气体中观测量子振荡,表明高流动性.
- 在超导体上制造的负差电阻 (NDR) 半导体晶体管的演示.
结论:
- 在晶体化物超导体上直接生长高质量的半导体异构结构和设备是可行的.
- 这种集成为将超导体的宏观量子效应与III-半导体的电子,光子和压电性能相结合提供了可能性.
- 开发的技术可能会导致新型放大器和振荡器.
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