单分散纳米晶体形成的基本生长通道的定量识别
Jiongzhao Li1, Huifeng Wang1, Long Lin1
1Center for Chemistry of Novel & High-Performance Materials, and Department of Chemistry , Zhejiang University , Hangzhou 310027 , P. R. China.
Journal of the American Chemical Society
|April 12, 2018
概括
一个新的模型通过考虑所有生长途径来解释纳米晶体的形成, 而不是只考虑一个. 实验证实了多种生长通道的共存,进步了对单分散纳米晶体合成的理解.
科学领域:
- 材料科学
- 化学工程
- 物理化学
背景情况:
- 单分散纳米晶体形成的现有模型通常只能解释有限的实验观测.
- 需要一个统一的模型来描述复杂的生长机制.
研究的目的:
- 开发基于质量保存的纳米晶体形成的一般模型,涵盖所有生长道.
- 使用合成的硫化 (CdS) 纳米晶体实验验证该模型.
- 为确定增长道贡献提供量化方法.
主要方法:
- 纳米晶体生长的一般质量保存模型的开发.
- 使用自动化微反应器系统合成单分散CdS纳米晶体.
- 在现场监测前体转化和纳米晶体大小/度通过液相里埃变换红外 (FTIR) 和紫外线光谱.
主要成果:
- 开发的模型成功地描述了三个生长道:直接的单体合并,纳米晶体的溶解-再结晶以及集群的溶解.
- 使用CdS纳米晶体的实验结果证明了所有三个生长通道的共存,这与广泛接受的"聚焦"模型相矛盾.
- 在实验合成和监测中实现了高可重复性 (<1%) 和时间分辨率 (<1秒).
结论:
- 基于质量保存的综合模型提供了比以前接受的理论更完整的纳米晶体形成图片.
- 多种生长通道的共存对于理解单分散纳米晶体的形成至关重要.
- 开发的理论和实验方法适用于更广泛的合纳米晶合成.
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