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Understanding Cerebellar Pattern Formation
Published on: November 1, 2007
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半导体中的图案形成
V V Bel'kov1, J Hirschinger1, V Novák2
1Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany.
Nature
|April 19, 2018
概括
非线性半导体特性导致非平衡相位过渡. 在低温下,冲击电离会导致自由载体密度急剧增加,形成丝状电流模式.
科学领域:
- 半导体物理
- 凝聚物质物理
背景情况:
- 在半导体中,非线性载体动力学和传输是至关重要的.
- 通过冲击电离产生自由载体的自触媒是一种关键的低温非线性.
研究的目的:
- 研究由非线性过程驱动的半导体中的非平衡相变.
- 了解冲击电离在载体生成和运输中的作用.
主要方法:
- 分析非线性生成和重组过程.
- 研究非线性电荷传输机制.
- 研究电场对载体密度的影响.
主要成果:
- 非线性可以诱导半导体的非平衡相位过渡.
- 在低温下的冲击电离导致在临界电场上的自由载体密度急剧增加.
- 静电场导致在接触处局部化的复杂的丝状电流模式.
结论:
- 非线性半导体的行为可以导致独特的相位过渡.
- 冲击电离是产生载体和非线性传输的基本机制.
- 丝状电流模式是电场中这些非线性特征的结果.
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