无机半导体在黑暗中具有非凡的可塑性
Yu Oshima1, Atsutomo Nakamura2, Katsuyuki Matsunaga2,3
1Department of Materials Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan.
概括
无机半导体如硫化 (ZnS) 在完全黑暗中变形时表现出令人惊的可塑性,与它们在光下的脆弱行为不同. 这种由黑暗引起的可塑性显著改变了材料的光学带隙.
科学领域:
- 材料科学
- 固态物理
- 半导体研究
背景情况:
- 无机半导体通常具有脆性故障模式.
- 外部刺激 (如光) 对半导体机械性能的影响尚未完全理解.
- 之前的研究还没有广泛探讨黑暗在半导体变形中的作用.
研究的目的:
- 在不同的光条件下研究无机半导体的机械行为.
- 确定无机半导体是否可以诱导可塑性.
- 探索黑暗对硫化 (ZnS) 变形和光学特性的影响.
主要方法:
- 在硫化物 (ZnS) 水晶上进行了室温变形试验.
- 实验是在不同的光照条件下进行的,包括完全黑暗.
- 分析了机械变形和光学带隙测量.
主要成果:
- 在光照射下变形时,ZnS晶体立即破裂.
- 在完全黑暗中,ZnS晶体表现出显著的塑性变形,高达45%的应变.
- 变形的ZnS晶体显示其光学带隙明显减少.
结论:
- 在完全黑暗中,ZnS的脱位变得可移动,使塑性变形成为可能.
- 观察到的可塑性表明无机半导体本质上不是易碎的.
- 异位的增加会影响整个晶体的光学带隙.
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