过渡金属二硫化物的合成侧面金属半导体异构结构
Wei Sun Leong1, Qingqing Ji2, Nannan Mao1
1Department of Electrical Engineering and Computer Science , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States.
Journal of the American Chemical Society
|September 21, 2018
概括
研究人员开发了一种两步化学蒸汽沉积 (CVD) 方法,以创建高质量的横向异构结构. 这种技术可以在二维 (2D) 电子中实现超低的接触阻力,显著提高了场效应的移动性.
科学领域:
- 材料科学
- 凝聚物质物理学
- 纳米技术
背景情况:
- 侧向异构结构对于先进的二维电子和光电子非常重要.
- 在这些异构结构中实现平面完整性对于设备的性能至关重要.
研究的目的:
- 在金属和半导体过渡金属二硫化物 (TMD) 层之间构建高质量的横向异构的新方法.
- 研究这些新形成的异构结构的接触阻力和场效应移动性.
主要方法:
- 使用两步化学蒸汽沉积 (CVD) 过程.
- 研究了二硫化 (MoS2) 和二硫化 (VS2) 层之间的核和结合形成.
- 描述了由此产生的侧向异构结构的接触阻力和场效应移动性.
主要成果:
- 在金属VS2和半导体MoS2之间使用两步CVD工艺成功构建了高质量的横向异构结构.
- 观察到多晶单层MoS2从VS2晶顶中核化,形成一个维的结点.
- 与传统接触器相比,实现了超低的接触阻力 (0.5 kΩ·μm) 和6倍的场效应移动性.
结论:
- 这一全CVD战略为制造全2D合成电子产品提供了新的途径.
- 开发的方法克服了创建横向异构结构的传统边缘表层的局限性.
- 这种方法对推进二维电子和光电子领域具有重大潜力.
相关概念视频
Properties of Transition Metals
29.9K
Transition metals are defined as those elements that have partially filled d orbitals. As shown in Figure 1, the d-block elements in groups 3–12 are transition elements. The f-block elements, also called inner transition metals (the lanthanides and actinides), also meet this criterion because the d orbital is partially occupied before the f orbitals.
29.9K
Metal-Semiconductor Junctions
1.0K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.0K
Biasing of Metal-Semiconductor Junctions
586
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
586
Bonding in Metals
52.5K
Metallic bonds are formed between two metal atoms. A simplified model to describe metallic bonding has been developed by Paul Drüde called the “Electron Sea Model”.
52.5K
Metallic Solids
20.7K
Metallic solids such as crystals of copper, aluminum, and iron are formed by metal atoms. The structure of metallic crystals is often described as a uniform distribution of atomic nuclei within a “sea” of delocalized electrons. The atoms within such a metallic solid are held together by a unique force known as metallic bonding that gives rise to many useful and varied bulk properties.
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability....
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability....
20.7K
Alkali Metals
24.8K
Group 1 elements are soft and shiny metallic solids. They are malleable, ductile, and good conductors of heat and electricity. The melting points of the alkali metals are unusually low for metals and decrease going down the group, while the density increases going down the group with the exception of potassium (Table 1).
Table 1: Properties of the alkali metals
Table 1: Properties of the alkali metals
24.8K


