具有高度均厚度分布的二维尼铁单晶的合成控制
Bei Zhao1, Weiqi Dang1, Yuan Liu1,2
1Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering , Hunan University , Changsha 410082 , China.
Journal of the American Chemical Society
|October 23, 2018
概括
研究人员合成了具有精确控制厚度的大面积,原子薄的 Telluride (NiTe2) 单晶. 这些二维材料具有可调节的电子特性和高导电性,为新型电子设备铺平了道路.
科学领域:
- 材料科学
- 凝聚物质物理学
- 纳米技术
背景情况:
- 二维 (2D) 层材料具有独特的厚度依赖的电子和光学特性.
- 目前对二维材料的研究受限于小尺寸和剥皮方法的低产量.
- 在二维材料合成过程中精确控制原子层数量仍然是一个重大挑战.
研究的目的:
- 报告一项关于大面积,原子薄2D telluride (NiTe2) 单晶的化学蒸汽沉积 (CVD) 合成的系统研究.
- 研究合成的NiTe2单晶的厚度依赖的电子特性.
- 建立一个可靠的化学路径来生产具有定制厚度的二维单晶.
主要方法:
- 化学蒸汽沉积 (CVD) 合成
- 精确控制生长温度以调整NiTe2厚度
- 使用X射线衍射 (XRD),传输电子显微镜 (TEM) 和高分辨率扫描传输电子显微镜 (HR-STEM) 的表征.
- 电气传输测量
主要成果:
- 合成了具有可调节厚度 (1到多层,std dev ~0.3 nm) 的均NiTe2单晶.
- 获得的最大侧面域大小为~440μm,控制核密度.
- 证实了高质量的六边形1T相NiTe2单晶.
- 观察到可以调节厚度的电特性,包括高导电性 (高达7.8 × 105 S m-1) 和断裂电流密度 (高达4.7 × 107 A/cm2).
结论:
- 一种强大的CVD方法可以合成具有精确控制厚度的大面积2D NiTe2单晶.
- 合成的NiTe2具有出色的电特性,包括高导电性和断裂电流密度.
- 这项工作为制造适合厚度的二维材料提供了可靠的途径,使新的设备架构成为可能.
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