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Updated: Feb 3, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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在二维Fe3GeTe2中调节门的室温铁磁

Yujun Deng1,2,3, Yijun Yu1,2,3, Yichen Song1,2,3

  • 1State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, China.

Nature
|October 24, 2018
PubMed
概括

研究人员开发了一种新技术,以隔离二维 (2D) 铁-3--化 (Fe3GeTe2) 单层. 这种二维材料具有可调节到室温的铁磁性, 使用离子门为先进的自旋装置铺平了道路.

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