高性能GeTe热电器在面阶段和立方阶段
Juan Li1, Xinyue Zhang1, Xiao Wang1
1Interdisciplinary Materials Research Center, School of Materials Science and Engineering , Tongji University , Shanghai 201804 , China.
Journal of the American Chemical Society
|October 27, 2018
概括
在 Telluride (GeTe) 中的抗兴奋剂通过增强带退化和降低导热性来优化热电性能. 这项研究在立方体和方体面的GeTe阶段实现了高的热电功率 (zT) 超过2.
科学领域:
- 材料科学
- 固态物理
- 热电材料
背景情况:
- Telluride (GeTe) 在立方体和方体结构之间呈现相位过渡.
- 立方GeTe和相关的IV-VI半导体具有双价值带结构 (L和S带),由于高频段退化,对热电性能有利.
- 罗姆体GeTe显示了变化的带排序和分裂,为操纵带退化提供了新的途径.
研究的目的:
- 优化载体度,并使用 (Sb) 合物操纵GeTe的晶格扭曲.
- 为了最大限度地提高带退化和增强基于GeTe的热电的电子性能.
- 通过Sb-doping诱导的声子散射来降低格子的导热性.
主要方法:
- Telluride (GeTe) 的抗 (Sb) 兴奋剂.
- 对载体度和状格子扭曲的研究.
- 对波段结构操纵和声子散射机制的分析.
主要成果:
- Sb-doping成功优化了载体度,并控制了状晶格的扭曲.
- Sb-doping 增强了带变性和促进了 PbTe 溶解性,从而增加了 Ge/Pb 替代缺陷的语子散射.
- 在低于800K的温度下,在面和立方GeTe相中都获得了超过2的优异热电值 (zT).
结论:
- 含有Sb的GeTe合金表现出优异的热电特性,使其成为800K以下应用的首选.
- 这项研究强调了操纵晶体结构对称性在推进热电材料中的关键作用.
- 这项工作为设计高性能热电器提供了途径,通过受控的注和结构修改.
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