在Chalcopyrite CuFeS2中进行n型和p型导电之间的压力驱动可逆切换
Ting Wen1, Yonggang Wang1, Nana Li1
1Center for High Pressure Science and Technology Advanced Research (HPSTAR) , Beijing 100094 , China.
Journal of the American Chemical Society
|November 29, 2018
概括
压力诱导了p型和n型导电之间的可逆切换. 这种从半导体到半导体的转换与材料的结构相变和旋转交叉有关.
科学领域:
- 材料科学
- 凝聚物质物理学
- 固态化学
背景情况:
- 在基于Ag的半导体中,温度依赖的导电类型切换是罕见的.
- 压力是诱导过渡金属半导体集体现象的有效刺激.
研究的目的:
- 为了研究CuFeS2中压力驱动的导电类型切换.
- 了解压力下的结构性,电子性和旋转性之间的关系.
主要方法:
- 使用钻石的高压实验.
- 用X射线衍射进行结构分析.
- 对电子性能进行光电流和霍尔系数测量.
- 用于确定价值状态的X射线吸收光谱 (XAS).
主要成果:
- CuFeS2具有可逆的p型到n型导电转换约为8GPa.
- 从空间组I-42d到I-4的结构相变发生在FeS4四面体体积缩小时.
- 一个高到低的Fe2+旋转交叉 (S=2到S=0) 伴随着相位过渡.
- 价值分布仍然是Cu2+Fe2+S2,没有离子电荷转移.
结论:
- 在CuFeS2中观察到一种新的压力驱动的p-n导电切换现象.
- 这种切换与压力诱导的结构相位过渡和旋转交叉相关.
- CuFeS2是开发新型应压电子设备的有希望的材料.
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