VO2

D Lee1, B Chung2, Y Shi3

  • 1Department of Materials Science and Engineering, University of Wisconsin, Madison, WI 53706, USA.

Science (New York, N.Y.)
|December 1, 2018
PubMed
概括

研究人员在二氧化瓦纳异构中实现了同结构金属绝缘体过渡,纯粹由接口上的电子相互作用驱动. 这样可以绕过结构变化,为电子设备设计提供新的可能性.

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