没有陷的CsPbX3纳米晶体的设计原理:用柔软的易斯基数和消除表面化物空隙
David P Nenon1, Kimo Pressler, Jun Kang1
1Material Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States.
Journal of the American Chemical Society
|December 4, 2018
概括
我们确定表面化物空缺是化物矿 (CsPbX3) 纳米晶体中电荷捕获的主要原因. 我们使用阳离子联体的被动化策略实现了接近单元的量子产量,
科学领域:
- 材料科学
- 纳米技术
- 固态物理
背景情况:
- 合物矿 (CsPbX3) 是一个有前途的光电子材料.
- 表面缺陷,特别是化物空隙,显著阻碍了它们的发光效率.
- 了解和减轻这些表面陷对于设备应用至关重要.
研究的目的:
- 阐明CsPbX3纳米晶体的一般表面被动化机制.
- 确定纳米晶体表面的电荷捕获的主要来源.
- 开发一种系统的方法来实现高度发光的CsPbX3材料.
主要方法:
- 结合实验 (光谱方法,H NMR) 和理论 (初始计算) 研究.
- 识别和量化表面化物空缺.
- 针对低协调的原子的基于联体的被动化策略的研究.
主要成果:
- 表面化物空缺被证实是占主导地位的充电捕获地点.
- 在表面陷和发光灭之间建立了定量相关性.
- 用特定的离子联体被动化导致接近单元的绝对量子产量和单指数的发光衰变.
结论:
- 介绍了CsPbX3纳米晶体的一般表面被动化机制.
- 针对低协调的原子的阳离子连接物有效地使表面陷无效.
- 这种框架可以合理设计具有定制性质的高发光材料.
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