在超薄的Na3Bi中调节电场的拓相变
James L Collins1,2,3, Anton Tadich3,4, Weikang Wu5
1School of Physics and Astronomy, Monash University, Clayton, Victoria, Australia.
Nature
|December 12, 2018
概括
超薄的石薄膜表现出电场诱导的量子相变,使室温拓晶体管运行. 这些材料在拓和常规绝缘器状态之间切换,具有适合低功耗电子设备的大带隙.
科学领域:
- 凝聚物质物理学
- 材料科学
- 量子现象
背景情况:
- 拓绝缘器为低功耗电子提供无散射边缘状态.
- 拓场效应晶体管需要具有大,可切换带隙的材料.
- 拓的迪拉克半金属是这种切换行为的候选者.
研究的目的:
- 在超薄的Na3Bi薄膜中研究电场诱导的量子相变.
- 确定Na3Bi适用于室温拓晶体管的应用.
- 在拓和常规绝缘状态下描述Na3Bi的带隙.
主要方法:
- 扫描道显微镜和光谱 (STM/STS).
- 角度分辨率光电子光谱 (ARPES).
- 通过和STM尖端的近距离电场应用.
主要成果:
- 单层和双层Na3Bi薄膜作为具有300meV带隙的二维拓绝缘体.
- 电场引发了斯塔克效应,封闭了拓间隙,并打开了90 meV的常规间隙.
- 拓和常规带隙都超过室温热能 (25 meV).
结论:
- 超薄Na3Bi具有强大的拓和常规带隙,适用于室温操作.
- 该材料展示了对拓晶体管应用的电场调节相位过渡.
- 对于开发节能逻辑电路而言,Na3Bi是一个有前途的材料.
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