范德瓦尔斯堆叠诱导过渡从肖特基到欧姆接触:多层内部的二维金属
Tao Shen1, Ji-Chang Ren1, Xinyi Liu1
1Nano and Heterogeneous Materials Center, School of Materials Science and Engineering , Nanjing University of Science and Technology , Nanjing 210094 , China.
Journal of the American Chemical Society
|January 29, 2019
概括
控制像InSe这样的二维材料的金属接触是电子技术的关键. 范德瓦尔斯堆叠和增加InSe层可以通过减少费米级别固定来创建高效的欧姆接触.
科学领域:
- 材料科学
- 凝聚物质物理学
- 纳米技术
背景情况:
- 电子设备使用二维 (2D) 材料,需要金属接触.
- 接触类型 (欧姆或肖特基) 极大地影响了设备的性能.
- 费米水平固定 (FLP) 使得实现低电阻欧米接触变得复杂.
研究的目的:
- 调查范德瓦尔斯堆叠对InSe和2D金属之间的Schottky屏障高度的影响.
- 探索抑制FLP并实现欧姆接触的方法.
- 确定基于InSe的设备的最佳电极材料.
主要方法:
- 使用密度函数理论 (DFT) 的计算.
- 分析了肖特基屏障的高度和费米水平的固定.
- 评估了InSe层数对电子属性的影响.
主要成果:
- 范德瓦尔斯堆叠通过抑制FLP有效调节舒特基屏障.
- 增加 InSe 层数量从 Schottky 到 Ohmic 的接触.
- Cd3C2被确定为2D InSe最兼容的电极.
结论:
- 范德瓦尔斯堆叠提供了一种控制InSe金属接触的方法.
- 对于欧姆接触形成来说,InSe的层工程是一个可行的策略.
- 这项研究有助于开发基于InSe的先进纳米设备.
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