静态测量控制的基于InP的量子点:合成,光发光和电发光
Yang Li1, Xiaoqi Hou1, Xingliang Dai1,2
1Center for Chemistry of Novel & High-Performance Materials and Department of Chemistry , Zhejiang University , Hangzhou 310027 , People's Republic of China.
Journal of the American Chemical Society
|April 10, 2019
概括
在酸/二/硫化物量子点 (QD) 中的固体测量控制显著提高了它们的性能. 这些无/无QD实现了高效率和亮度,与传统选项相美.
科学领域:
- 材料科学
- 纳米技术
- 光电子产品
背景情况:
- 基于的量子点 (QD) 具有出色的光电子特性,但也带来了环境问题.
- 开发高性能,无替代品对于可持续技术至关重要.
研究的目的:
- 增强化/化/硫化 (InP/ZnSe/ZnS) 核心/外量子点 (QD) 的性能.
- 通过使用更安全的材料组成,实现与最先进的化 (CdSe) QD相匹配的性能.
- 在量子点发光二极管 (QLED) 中展示这些改进的QD的潜力.
主要方法:
- 在InP/ZnSe/ZnS QD的核心和外区域实施了精确的静脉测量控制.
- 合成的QD因其光发光量子产量,衰变动态,线宽和单点闪行为而具有特征.
- 量子点发光二极管 (QLED) 使用工程InP/ZnSe/ZnS QD作为发射器进行制造.
主要成果:
- 设计的InP/ZnSe/ZnS QD显示了接近单元的光发光量子产量和单指数衰变动态.
- 这些QD显示了狭窄的发射线宽度和单点级别的非闪行为.
- 制造的QLED实现了12.2%的峰值外部量子效率和超过10,000cdm-2的最大亮度.
结论:
- 固体测量控制是一种有效的策略,可以大大提高InP/ZnSe/ZnS核心/外/外QD的性能.
- 这些无/无QD的性能与基于CdSe的QD相美,在某些方面甚至超过了它们.
- 开发的InP/ZnSe/ZnS QD代表了高性能,环保的光学和光电子材料的前景.
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