在单层半导体中抑制所有非辐射重组路径
Der-Hsien Lien1,2, Shiekh Zia Uddin1,2, Matthew Yeh1,2
1Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA.
概括
缺陷不会阻碍二维过渡金属二化物 (TMDC) 的光发光. 静电合使这些材料具有内在性,在没有化学处理的情况下实现近单位的量子产量,从而简化了设备的制造.
科学领域:
- 材料科学
- 凝聚物质物理学
- 纳米技术
背景情况:
- 半导体中的缺陷通常会降低光发光 (PL) 量子产量 (QY),限制光电子设备的效率.
- 像MoS2这样的二维过渡金属二甲基化物 (TMDC) 往往由于加工状态的原生缺陷而表现出低的PL QY.
研究的目的:
- 调查原生缺陷对TMDC单层的PLQY的影响.
- 确定固有TMDC单层是否可以在没有化学被动化的情况下实现高PLQY.
主要方法:
- 使用静电合使MoS2和WS2单层成为内在的.
- 经过处理和静电合的TMDC单层的测量PL QY.
- 在原生缺陷的情况下分析了激素重组动态.
主要成果:
- 经过处理的MoS2和WS2单层在静电合后达到接近单一的PLQY.
- 中性激素重组被发现是完全辐射的,即使具有高密度的原生缺陷.
- 证明这些系统的高缺陷密度并不能本质上限制PLQY.
结论:
- 对于光电子应用的TMDC单层中低缺陷密度的严格要求可以减轻.
- 内在的TMDC单层是高效的发光器,为设备开发开辟了新的途径.
- 用TMDC实现高性能光电子技术的可行策略是静电兴奋剂.
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