在介电基板上的统一石墨烯单层中,主要核化化学蒸汽沉积增长
Huaping Wang1,2, Xudong Xue3, Qianqing Jiang1,2
1Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190 , People's Republic of China.
Journal of the American Chemical Society
|July 3, 2019
概括
研究人员开发了一种在介电基板上生长均石墨烯薄膜的新方法. 这种前体修饰策略提高了高级电子和光电子的石墨烯质量.
科学领域:
- 材料科学
- 纳米技术
- 固态物理
背景情况:
- 高质量的石墨烯在介电基板上的直接化学蒸汽沉积 (CVD) 增长对电子和光电子至关重要.
- 现有的方法往往导致介电材料上的石墨烯薄膜不均或质量差.
研究的目的:
- 在介电基板上制造超均的石墨烯单层膜的新策略.
- 在修改过电面上研究改善石墨烯生长的机制.
主要方法:
- 在石墨烯生长过程中采用了前体修饰策略来抑制二次核化.
- 进行了基质的化,以改变表面特性.
- 为了了解生长动态,进行了机制研究.
- 使用培养的石墨烯薄膜制造了场效应晶体管 (FET).
主要成果:
- 前体修饰策略成功抑制了二次核化,从而产生了超均的石墨烯单层膜.
- 基质的化削弱了石墨烯边缘与基质之间的结合,促进了初级核化主导的生长.
- 石墨烯薄膜在FET中表现出异常的电性能,电荷载体的移动性在空气中达到3800 cm2 V-1 s-1.
- 这种移动性明显高于以前在介电材料上培养的石墨烯的值.
结论:
- 在介电基板上生产高质量,均的石墨烯单层时,这种新型的前体改造策略是有效的.
- 这种进步为石墨烯在先进的电子和光电子设备中的实际应用开辟了新的可能性.
- 这些发现为在绝缘材料上控制石墨烯合成提供了新的途径.
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