带诱导的表面电荷密度调节在缩小尺寸的矿中产生局部II型带对齐
Rafael Quintero-Bermudez1, Andrew H Proppe1,2, Arup Mahata3,4
1Department of Electrical and Computer Engineering , University of Toronto , 10 King's College Road , Toronto , Ontario M5S 3G4 , Canada.
Journal of the American Chemical Society
|August 2, 2019
概括
在二维矿表面的合物度控制了波段的对齐,使得可调的光电子接口成为可能. 这项研究解释了变化的连接体密度如何改变工作功能,从而诱导具有I型对齐的材料的II型对齐.
科学领域:
- 材料科学
- 凝聚物质物理学
- 纳米技术
背景情况:
- 二维 (2D) 和准二维矿对于光电子设备至关重要.
- 这些材料的带对齐是有争议的,关于I型与II型接口的报道是相互矛盾的.
研究的目的:
- 调查连体度在二维矿中调节带对齐中的作用.
- 为了协调有关矿带排列的相互矛盾的实验报告
主要方法:
- 结合计算方法 (密度函数理论) 和实验方法 (紫外线光电子光谱,探头暂时吸收).
- 表面连接体密度的调节及其对工作功能和电荷转移的影响.
主要成果:
- 可变的连接物度调整了量子井的表面电荷密度和有效工作功能.
- 在具有内在I型对齐的材料中诱导II型接口.
- 观察到高达1 eV的工作功能的转移;至少200 meV的频段对齐调节得到实验证实.
结论:
- 连接物度是控制二维矿带排列的一个关键因素.
- 这种机制解释了基于矿的LED和光伏所观察到的多种接口类型 (I型/II型).
- 这些发现为工程矿接口提供了一条途径,以提高设备性能.
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